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Effects of Humidity on the Microstructure and the Ferroelectric Properties of Sol-Gel grown P(VDF-TrFE) Films
Young Joon Ko, Da Woon Jin, Dae Sol Kong, Jong Hoon Jung
Department of Physics, Inha University, Incheon 22212, Korea
We report the microstructure and ferroelectric property of P(VDF-TrFE) films grown at various humidity conditions and duration time using a sol-gel method. When the duration time is long, the moisture strongly affects the microstructure and ferroelectric property of P(VDF-TrFE). Also, transparent P(VDF-TrFE) film changes into opaque when the humidity is high. This work provides the upper limits of humidity and duration time for the growth of high-quality P(VDF-TrFE) films using a sol-gel method.
J. Korean Phys. Soc. 2020; 76: 348-351  https://doi.org/10.3938/jkps.76.348

Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer
M. Oh1, J. W. Yang1, H. Kim1, S. Kim2, K.-S. Ahn3
1School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea
2National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Pohang 37673, Korea
3School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea
The AlGaN/GaN high electron mobility transistors (HEMTs) fabricated with MgF2 passivation layer exhibited a higher transconductance of 136 mS/mm, a significant reduction in the gate leakage currents, and a higher breakdown voltage of 563 V compared to the reference one, owing to the effective suppression of charge trapping at the surfaces.
J. Korean Phys. Soc. 2020; 76: 278-280  https://doi.org/10.3938/jkps.76.278
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