Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

Cross-Disciplinary Physics and Related Areas of Science and Technology

J. Korean Phy. Soc. 2011; 59(3): 2354-2361

Published online September 15, 2011     https://doi.org/10.3938/jkps.59.2354

Copyright © The Korean Physical Society.

Thickness Dependence of Properties of ZnO Thin Films on Porous Silicon Grown by Plasma-assisted Molecular Beam Epitaxy

Min Su Kim, Kwang Gug Yim, Jae-Young Leem, Soaram Kim, Giwoong Nam, Dong-Yul Lee, Jin Soo Kim, Jong Su Kim

Abstract

Zinc oxide (ZnO) thin films with different thicknesses were grown on Si and porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the thickness and PS on the properties of the ZnO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO thin films grown on PS exhibit a very smooth surface morphology even at a growth time of 5 min, which indicates that the films are in the 2D mode of grain growth. It is suggested that the optical properties, as well as the structural properties, of the ZnO thin films are enhanced by introducing PS. Also, the structural and the optical properties are improved as the thickness is increased

Keywords: Photoluminescence, Zinc oxide, Porous silicon, Thin film, Plasma-assisted molecular beam epitaxy