Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

Cross-Disciplinary Physics and Related Areas of Science and Technology

J. Korean Phy. Soc. 2011; 59(3): 2343-2348

Published online September 15, 2011     https://doi.org/10.3938/jkps.59.2343

Copyright © The Korean Physical Society.

Effects of Annealing Temperature on the Structural and the Optical Properties of ZnO Thin Films Grown on Porous Silicon by Using Plasma-assisted Molecular Beam Epitaxy

Min Su Kim, Kwang Gug Yim, Jae-Young Leem, Soaram Kim, Giwoong Nam, Dong-Yul Lee, Jin Soo Kim, Jong Su Kim

Abstract

Zinc oxide (ZnO) thin films were grown on Si and porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE) and then the annealing process was carried out at various temperatures ranging from 500 to 700 oC for 10 min under argon atmosphere. The effects of the PS and the annealing temperature on the structural and optical properties of the ZnO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The surface morphology of the ZnO thin films grown on PS exhibits a mountain range-like structure while a typical 3D island surface structure was observed from the ZnO thin films grown on Si. The grain size of the ZnO thin films was increased as the annealing temperature increased without a significant change in its shape. The ZnO thin films grown on PS show only a ZnO (002) diffraction peak while the several diffraction peaks indicating existence of a large lattice mismatch were observed in the ZnO thin films grown on Si. The PL intensity ratio of the ZnO thin films was increased with increase in the annealing temperature. The structural and optical properties of the ZnO thin films were enhanced in the case of PS. And also, the properties were improved as the annealing temperature increased to 700 oC.

Keywords: Zinc oxide, Porous silicon, Annealing, Plasma-assisted molecular beam epitaxy, Photoluminescence