Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2011; 58(5(2)): 1494-1499
Published online May 13, 2011 https://doi.org/10.3938/jkps.58.1494
Copyright © The Korean Physical Society.
Sung-Min Yoon, Shinhyuk Yang, Chun-Won Byun, Soon-Won Jung, Sang-Hee Ko Park, Doo-Hee Cho, Min-Ki Ryu, Oh-Sang Kwon, Byeong Hoon Kim, Chi-Sun Hwang, Kyoung-Ik Cho
We proposed and fabricated a transparent nonvolatile memory thin-film transistor (T-MTFT). The T-MTFT was composed of a ferroelectric copolymer gate insulator of poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] and an oxide semiconducting active channel of amorphous Al-Zn-Sn-O (AZTO). The fabrication procedures were so designed as to have both good transparency and high performances even at a low process temperature below 200 ¡?. Consequently, the memory window with a gate voltage sweep of -10 to 10 V, the field-effect mobility in the linear region, the subthreshold swing, the on/off ratio, and the gate leakage current were obtained to be 8.6 V, 32.2 cm2 V?1¡¤s?1, 0.45 V/dec, 108, and 10?12 A, respectively. Although the photo-response and the retention behaviors should be more improved and optimized, all these obtained characteristics were very promising for the future transparent electronics.
Keywords: Transparent, Nonvolatile memory, Thin-film transistor, Ferroelectric copolymer, Oxide semiconductor,
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