Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2011; 58(3(1)): 608-611

Published online March 15, 2011     https://doi.org/10.3938/jkps.58.608

Copyright © The Korean Physical Society.

n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target

Woo-Seok Cheong

Abstract

Using reactive sputtering, we made transparent amorphous Sb2TeOx thin films from a metallic Sb2Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb2TeOx gate insulators deposited at room temperature showed a large hysteresis with a counterclockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb2TeOx films formed at 250 ¡?. After the IGZO TFT had been annealed at 200 ¡? for 1 hour in an O2 ambient, the mobility of the IGZO TFT was 22.41 cm2/Vs, and the drain current on-off ratio was ¡­108.

Keywords: Reactive sputtering, Oxide semiconductor, Thin-film transistor, IGZO, , Sb2TeOx