Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2010; 57(4(1)): 1072-1076
Published online October 15, 2010 https://doi.org/10.3938/jkps.57.1072
Copyright © The Korean Physical Society.
Soon-mok Choi, Kyung-ho Kim, Won-seon Seo, Il-ho Kim, Sun-uk Kim
Thermoelectric materials Mg2Si and rare-earth doped Mg2Si were fabricated by vacuum melting method followed by Spark Plasma Sintering (SPS). The electrical conductivity, the Seebeck coefficient, and thermal conductivity between 300 and 800K were measured to evaluate the thermoelectric properties of Mg2Si. Their thermoelectric properties were improved with increased sintering temperature of SPS. All the pure and Nd doped Mg2Si samples exhibited n-type behavior over the temperature range. The 1123K SPSed Mg2Si sample showed maximum figure of merit, ZT, of 0.24 at 773K.
Keywords: Semiconductor, Mg2Si, Rare-earth doping, Thermoelectric
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