Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2010; 57(4(1)): 1072-1076

Published online October 15, 2010

Copyright © The Korean Physical Society.

Synthesis Characteristics and Thermoelectric Properties of the Rare-earth-doped Mg2Si System

Soon-mok Choi, Kyung-ho Kim, Won-seon Seo, Il-ho Kim, Sun-uk Kim


Thermoelectric materials Mg2Si and rare-earth doped Mg2Si were fabricated by vacuum melting method followed by Spark Plasma Sintering (SPS). The electrical conductivity, the Seebeck coefficient, and thermal conductivity between 300 and 800K were measured to evaluate the thermoelectric properties of Mg2Si. Their thermoelectric properties were improved with increased sintering temperature of SPS. All the pure and Nd doped Mg2Si samples exhibited n-type behavior over the temperature range. The 1123K SPSed Mg2Si sample showed maximum figure of merit, ZT, of 0.24 at 773K.

Keywords: Semiconductor, Mg2Si, Rare-earth doping, Thermoelectric