Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

Condensed Matter

J. Korean Phy. Soc. 2010; 56(3): 809-812

Published online March 15, 2010     https://doi.org/10.3938/jkps.56.809

Copyright © The Korean Physical Society.

Photoluminescence Properties of ZnO Thin Films Grown Using Hydrothermal Technique

In-hwan Lee, Trilochan Sahoo, Lee-Woon Jang, Ju-Won Jeon, Myoung Kim, Jin-Soo Kim, Joon-Seop Kwak, Jaejin Lee

Abstract

Photoluminescence properties of zinc oxide thin film grown by hydrothermal technique have been investigated. Zinc oxide thin film with wurtzite symmetry and c-axis orientation was grown in aqueous solution at 90 oC by hydrothermal technique on sapphire substrate with p-GaN buffer layer. The low temperature photoluminescence analysis revealed sharp bound exciton related luminescence peak at 3.366 eV, with very narrow peak width. Temperature dependent variation of emission energy and integrated intensity was studied. The activation energy of the bound exciton complex was calculated to be 7.35?.5 meV from temperature dependent quenching of integral intensities.

Keywords: Photoluminescence, bound exciton, ZnO, Hydrothermal, Thin film