Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2010; 56(3): 809-812
Published online March 15, 2010 https://doi.org/10.3938/jkps.56.809
Copyright © The Korean Physical Society.
In-hwan Lee, Trilochan Sahoo, Lee-Woon Jang, Ju-Won Jeon, Myoung Kim, Jin-Soo Kim, Joon-Seop Kwak, Jaejin Lee
Photoluminescence properties of zinc oxide thin film grown by hydrothermal technique have been investigated. Zinc oxide thin film with wurtzite symmetry and c-axis orientation was grown in aqueous solution at 90 oC by hydrothermal technique on sapphire substrate with p-GaN buffer layer. The low temperature photoluminescence analysis revealed sharp bound exciton related luminescence peak at 3.366 eV, with very narrow peak width. Temperature dependent variation of emission energy and integrated intensity was studied. The activation energy of the bound exciton complex was calculated to be 7.35?.5 meV from temperature dependent quenching of integral intensities.
Keywords: Photoluminescence, bound exciton, ZnO, Hydrothermal, Thin film
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