Geometric and Electronic Structure of Passive CuN Monolayer on Cu(111) : A Scanning Tunneling Microscopy and Spectroscopy Study
J. Korean Phy. Soc. 2010; 56: 620~624
Published online February 12, 2010 © 2010 The Korean Physical Society.

Abstract
잸n insulating CuN monolayer was grown on a Cu(111) surface; subsequently, the dynamic growth process, the reconstructed geometric structure and the electronic structure were studied using scanning tunneling microscopy. Confirmation of the atomic model of the pseudo-(100) layer, proposed by Higgs et al. and Driver et al. was made. In addition, we observed a small misalignment of the super cell away from the <110> direction of the Cu substrate, resulting in long-range distortion. A large insulator-like band gap of ~ 3.3 eV was measured through the CuN surface. The CuN monolayer can be used as a model surface on which the electronic structure of an atom or a molecule is explored by scanning tunneling microscopy. This electronic structure can not be perturbed by the metallic substrate, despite the tunneling of electrons through the surface layer.
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