Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2009; 55(6): 2556-2559

Published online December 15, 2009     https://doi.org/10.3938/jkps.55.2556

Copyright © The Korean Physical Society.

Effect of Buffer Layer Annealing on ZnO Thin Films Grown by using Atomic Layer Deposition

J. Y. Lee, C. R. Kim, J. H. Heo, C. M. Shin, J. H. Park, T. M. Lee, H. Ryu, J. H. Chang, C. S. Son, B. C. Shin, W. J. Lee, S. T. Tan, J. L. Zhao, X. W. Sun

Abstract

In this study, the effects of buffer layer annealing duration on ZnO thin films deposited by using the remote plasma atomic layer deposition (ALD) method are discussed. ZnO thin films were grown on ZnO-buffer/Si (100) and were annealed for various durations between 0.5 and 60 min. The structural and the optical properties of the ZnO thin films were investigated by using atomic force microscopy, X-ray diffraction, and photoluminescence measurements. The ZnO thin films grown on a rough ZnO buffer layer were found to have high optical quality. The results from this study possibly contribute to advances in ZnO-base LED technologies.

Keywords: Buffer layer, Annealing, ZnO, Atomic layer deposition