Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2009; 55(3(2)): 1201-1204

Published online September 15, 2009     https://doi.org/10.3938/jkps.55.1201

Copyright © The Korean Physical Society.

Charging Effect of WSi$_{2}$ Nano-particles Embedded in SiO$_{2}$ Layers

KiBong Seo, DongUk Lee, TaeHee Lee, EunKyu Kim

Abstract

A nano-floating gate capacitor with WSi$_{2}$ nano-particlesembedded in a SiO$_{2}$ layer was fabricated. The WSi$_{2}$nano-particles were formed from a thin WSi$_{2}$ layer during arapid thermal annealing process, and they had a spherical shape withan average diameter of 2.5 nm. The electrical properties of thenano-floating gate capacitor with WSi$_{2}$ nano-particles embeddedin SiO$_{2}$ dielectrics were characterized by usingcapacitance-voltage measurements. Then, a flat-band voltage shift ofup to 3.8 V due to carrier charging of the WSi$_{2}$ nano-particlesappeared when the gate voltage was swept from --7 V to +7 V and from+7 V to --7 V, which showed that the WSi$_{2}$ nano-particles couldbe applied to nonvolatile memory devices.

Keywords: WSi$_{2}$, Nano-particles, Nano-floating gate memory, Carrier charging effect