Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2009; 55(3(1)): 930-933

Published online September 15, 2009

Copyright © The Korean Physical Society.

Formation of a Compact Layer and Its Influence on the Optical Propertiesof GaN Nanorods Grown on Si Substrates

ByoungWoo Lee, TaeKyu Lee, TaeSoo Kim, JaeWan Lee, MoonDeock Kim, Eunsoon Oh


GaN nanorods were grown on Si(111) substrates by using molecularbeam epitaxy. Between the substrates and the GaN nanorods, compactlayers were often formed. We compared the photoluminescence (PL)spectra for samples with and without compact layers. The PL spectrafrom the GaN nanorods without compact layers revealed a doublet at3.442 eV and 3.448 eV. A PL peak at 3.41 eV, often observed from GaNnanorods with compact layers, was also observed from the backside PLspectra of high-quality GaN epilayers grown on sapphire substrates,indicating that the PL peak was associated with an interfacialstructural defect. Comparison of the PL peak energies of thenanowires with those of the bulk GaN indicates that the nanorods arefully relaxed.

Keywords: GaN, Nanowire