Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2009; 55(3(1)): 930-933
Published online September 15, 2009 https://doi.org/10.3938/jkps.55.930
Copyright © The Korean Physical Society.
ByoungWoo Lee, TaeKyu Lee, TaeSoo Kim, JaeWan Lee, MoonDeock Kim, Eunsoon Oh
GaN nanorods were grown on Si(111) substrates by using molecularbeam epitaxy. Between the substrates and the GaN nanorods, compactlayers were often formed. We compared the photoluminescence (PL)spectra for samples with and without compact layers. The PL spectrafrom the GaN nanorods without compact layers revealed a doublet at3.442 eV and 3.448 eV. A PL peak at 3.41 eV, often observed from GaNnanorods with compact layers, was also observed from the backside PLspectra of high-quality GaN epilayers grown on sapphire substrates,indicating that the PL peak was associated with an interfacialstructural defect. Comparison of the PL peak energies of thenanowires with those of the bulk GaN indicates that the nanorods arefully relaxed.
Keywords: GaN, Nanowire
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