Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2009; 55(3(1)): 1074-1078

Published online September 15, 2009     https://doi.org/10.3938/jkps.55.1074

Copyright © The Korean Physical Society.

Thermal Annealing Effects of a Submicron-thick Ti Top Layer on\Electrolyte-exposed Metal Grids for Dye-sensitized Solar Cells

SeonHee Seo, Hyun-Ju Kim, Bo-Kun Koo, WonJae Lee, DongYoon Lee

Abstract

We studied the feasibility of an electrolyte-exposed non-noble-metalgrid for dye-sensitized solar cells (DSCs). A Ti/Ni bilayer grid wasdeposited on fluorine-doped SnO$_{2}$ by dc magnetron sputtering,which can give good chemical stability to strip-type DSCs against acorrosive I$^{-}$/I$_{3}^{-}$ redox electrolyte as well as areasonable fill factor of J-V characteristics. Despite the goodchemical stability of Ti, an as-prepared submicron-thick Ti toplayer did not protect a dissoluble Ni bottom grid. A hightemperature annealing afforded the bilayer grid to passivate thebottom grid. With the annealed and electrolyte-exposed Ti(0.1$mu$m)/Ni(1.0 $mu$m) bilayer grid, an efficiency of 5.7{\%} wasmeasured in a strip-type DSC. This value is comparable to that of aconventional DSC with a Ag (1.0 $mu$m) grid isolated from theelectrolyte with a thermoplastic sealant. In addition, this devicewas pretty stable chemically for 1400 h.

Keywords: Dye-sensitized solar cell, Grid, Passivation, Oxidation