Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2009; 55(1): 55-58

Published online July 15, 2009     https://doi.org/10.3938/jkps.55.55

Copyright © The Korean Physical Society.

Deposition of Al$_{2}$O$_{3}$ by Using ECR-ALD for OrganicSubstrate Devices

Woong-Sun Kim, Dae-Yong Moon, Byoung-Woo Kang, Jong-Wan Park, Jae-Gun Park

Abstract

Aluminum-oxide (Al$_{2}$O$_{3})$ thin films were deposited usingtrimethylaluminum (TMA) as the Al source and an O$_{2}$ plasma asthe oxidant. The films were deposited by using electron cyclotronresonance plasma-enhanced atomic layer deposition (ECR-PEALD) atroom temperature. This room-temperature deposition method is wellsuited for thermally fragile organic substrate devices. The growthrate was 2.2 {AA}/cycle, and a density of 3.2 g/cm$^{3}$ ofAl$_{2}$O$_{3}$ was deposited at room temperature and a plasma powerof 300 W. These low-temperature-deposited, thin, dense passsivationlayers meet requirements for implementation of organic substrates inflexible electronic or polymer random access memory (PoRAM)applications.

Keywords: Aluminum oxide (Al$_{2}$O$_{3})$, Atomic layer deposition, Passivation layer, Organic device