Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2009; 55(1): 140-143

Published online July 15, 2009     https://doi.org/10.3938/jkps.55.140

Copyright © The Korean Physical Society.

Preparation and Analysis of Schottky Diodes with Au andSol-gel-processed ZnO Thin Films

Kyoungwon Kim, Yong-Won Song, Jaehyeon Leem, Sangsig Kim, SangYeol Lee

Abstract

We fabricate Schottky diodes with the contact between a sol-gelderived ZnO layer and Au that guarantees the expected Schottkycontact due to the high work function. The formed single metalSchottky barrier shows characteristics comparable to the barrierformed by alloys. Au is deposited by thermal evaporation on a ZnOthin film that is optimally formed under sol-gel process conditionsof a 1-mol zinc acetate concentration and a 3000-rpm coating speed.Possible defects, which can provide deleterious current paths, areminimized by patterning the deposited Au. The I$-$V curve verifiesthe formation of a Schottky contact. Measurements showed that theSchottky barrier height and leakage current at $-$5 V were 0.6 eVand 1 $ imes$ 10$^{-12}$A, respectively.

Keywords: Sol-Gel, ZnO, Schottky diode, Thin films