Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2008; 53(9(5)): 2562-2567

Published online November 15, 2008     https://doi.org/10.3938/jkps.53.2562

Copyright © The Korean Physical Society.

Enhancement in the Photoluminescence of Porous Silicon Depositedby Sputtering an Ultrathin Silver Film

Hohyeong Kim, Chongmu Lee, D.H. Lee, Soon-Sun Hong

Abstract

Porous silicon (PS) with thin silver (Ag) coatings was preparedusing a two-step method of electrochemical anodization of siliconfollowed by sputter-deposition of a silver film. Thephotoluminescence (PL) and the transmittance properties of the Ag/PSsamples were evaluated by using PL spectroscopy and UV/VISspectrometry, respectively. Fourier-transform infrared (FTIR)spectroscopy and X-ray photoelectron emission spectroscopy (XPS)analyses were also performed to investigate the origin of the PLenhancement caused by the Ag deposition. The PL intensity for the PSwas increased by deposition of an Ag film. The optimum Ag filmthickness for enhancement of the PL from PS was 9.2 nm and the netincrease in the intensity of the light emitting from the Ag-coatedPS was about 78 \%. FTIR and XPS analysis results suggest that thePL enhancement caused by Ag the film's deposition is attributed to achange in the bond structure from Si-H bonds to Si-Ag bonds and toan increase in the charge carrier concentration. The deteriorationof the PL from the Ag-coated PS by thermal annealing is ascribed tocoalescence of the PS layer.

Keywords: Photoluminescence, Porous silicon, Silver, Transmittance, Annealing, X-ray photoelectron spectrometry