Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2008; 53(9(5)): 2562-2567
Published online November 15, 2008 https://doi.org/10.3938/jkps.53.2562
Copyright © The Korean Physical Society.
Hohyeong Kim, Chongmu Lee, D.H. Lee, Soon-Sun Hong
Porous silicon (PS) with thin silver (Ag) coatings was preparedusing a two-step method of electrochemical anodization of siliconfollowed by sputter-deposition of a silver film. Thephotoluminescence (PL) and the transmittance properties of the Ag/PSsamples were evaluated by using PL spectroscopy and UV/VISspectrometry, respectively. Fourier-transform infrared (FTIR)spectroscopy and X-ray photoelectron emission spectroscopy (XPS)analyses were also performed to investigate the origin of the PLenhancement caused by the Ag deposition. The PL intensity for the PSwas increased by deposition of an Ag film. The optimum Ag filmthickness for enhancement of the PL from PS was 9.2 nm and the netincrease in the intensity of the light emitting from the Ag-coatedPS was about 78 \%. FTIR and XPS analysis results suggest that thePL enhancement caused by Ag the film's deposition is attributed to achange in the bond structure from Si-H bonds to Si-Ag bonds and toan increase in the charge carrier concentration. The deteriorationof the PL from the Ag-coated PS by thermal annealing is ascribed tocoalescence of the PS layer.
Keywords: Photoluminescence, Porous silicon, Silver, Transmittance, Annealing, X-ray photoelectron spectrometry
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