Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2007; 51(1(2)): 92-95

Published online October 31, 2007

Copyright © The Korean Physical Society.

Structural and Dielectric Characterizations of PST(Pb0.8Sr0.2)O3/PST(Pb0.2Sr0.8)O3 Heterolayered Thin Films

Kyoung-Tae KIM, Chang-Il KIM, Jong-Chang WOO, Gwan-Ha KIM and Sung-Gap LEE


Dielectric (Pb$_{0.8}$Sr$_{0.2}$)O$_3$ (PST (80/20)) / (Pb$_{0.2}$Sr$_{0.8}$)O$_3$ (PST (20/80)) heterolayered thin-film structures were fabricated by a spin-coating method on Pt/Ti/SiO$_2$/Si substrate by alternately using PST (20/80) and PST (80/20) alkoxide solution. The structure and the morphology of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The PST heterolayered thin films exhibited strong (1 0 0) orientation. It can be assumed that the lower PST layer forms a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss, and tunability of the PST-6 heterolayered structure measured at 100 kHz were 452.2, 0.021 and 41 \%, respectively. All these parameters showed an increase with an increasing number of coatings, due to an increase in the strong (100) orientation.

Keywords: Dielectric properties, Sol-Gel, Heterolayered thin film, PST