Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2007; 50(3): 759-762

Published online March 15, 2007     https://doi.org/10.3938/jkps.50.759

Copyright © The Korean Physical Society.

Surface Morphologies and Optical Properties in CdxZn1-xTe/ZnTe Quantum Dots Grown on GaAs (100) and Si (100) Substrates

H. S. Lee , H. J. Kim , J. C. Choi , H. L. Park , J. S. Kim , T. W. Kim

Abstract

We have studied the growth of self-assembled Cd$_{0.6}$Zn$_{0.4}$Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd$_{0.6}$Zn$_{0.4}$Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd$_{0.6}$Zn$_{0.4}$Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E$_1$-HH$_1$). The activation energy of the electrons confined in the Cd$_{0.6}$Zn$_{0.4}$Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.

Keywords: Nanostructures, Quantum dots, CdZnTe, Atomic force microscopy, Photoluminescence