Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2008; 53(4): 2100-2104
Published online October 15, 2008 https://doi.org/10.3938/jkps.53.2100
Copyright © The Korean Physical Society.
J. O. Kim, S. J. Lee, S. K. Noh, J. W. Choe and T. W. Kang
We report the structural and the photoluminescence (PL) characteristics of spontaneously aligned InGaAs/GaAs quantum dots (QDs) that are self-assembled by using atomic layer epitaxy (ALE). Atomic force microscopy clearly identified that isolated QDs became more closely coupled and spontaneously aligned to a one-dimensional chain-like structure by simply increasing the nominal InGaAs coverage with no introduction of multiple layer stacking. The asymmetric PL spectra were analyzed by using a superposition of two main contributions due to different QD modes and the strong redshift behavior observed in the temperature dependence might be attributed to a distinctive property in very closely coupled ALE-grown QDs that is due to carrier tunneling occurring in company with thermal carrier transfer.
Keywords: Self-aligned quantum dots, Indium gallium arsenide, Atomic layer epitaxy, Atomic force microscopy, Photoluminescence
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