Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2008; 52(3): 631-634
Published online March 15, 2008 https://doi.org/10.3938/jkps.52.631
Copyright © The Korean Physical Society.
E. D. Sim, J. H. Song, K. S. Baek, S. K. Chang and K. S. Lee
The photoluminescence properties of ZnSe epilayers grown on GaAs substrates were studied in the temperature range of 10 $sim$ 100 K. The photoluminescence lineshape near the free exciton energy was significantly different depending on the epilayer thickness; for thin layers with thicknesses of about 0.1 $mu$m, the spectrum consisted of a single free-exciton line whereas for thick layers with thicknesses of about 1 $mu$m, the spectrum exhibited a broader line with a dip. The dip became wider with increasing layer thickness, temperature, and excitation intensity. These behaviors are explained in the framework of elastic exciton-polariton scattering from residual neutral impurities.
Keywords: Exciton-polariton, Neutral donor scattering, ZnSe/GaAs epilayer
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