Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2007; 50(6): 1921-1924

Published online June 15, 2007     https://doi.org/10.3938/jkps.50.1921

Copyright © The Korean Physical Society.

Effect of Thermal Annealing on the Magnetic and the Optical Properties of (Ga1-xMnx)N Thin Films Grown on GaN Buffer Layers

H. C. Jeon, Y. Shon, H. S. Kim, M. K. Li, S. J. Lee, T. W. Kang, J. H. Jung, T. W. Kim, H. S. Kim, M. D. Kim, K. L. Wang and J. J. Lee

Abstract

The annealing effect on the magnetic and the optical properties of (Ga$_{0.991}$Mn$_{0.009}$)N thin films grown on GaN buffer layers was investigated. The magnetization curves as functions of the magnetic field at 300 K showed that the magnetization in the (Ga$_{0.991}$Mn$_{0.009}$)N thin film annealed at 650 $^circ$C was significantly enhanced by annealing in comparison with that of the as-grown film. The photoluminescence spectra at 4 K showed that the optical properties of the (Ga$_{0.991}$Mn$_{0.009}$)N thin film annealed at 650 $^circ$C were improved due to annealing. These results can help to improve understanding of the thermal annealing effect on the magnetic and the optical properties of (Ga$_{1-x}$Mn$_x$)N thin films grown on GaN buffer layers.

Keywords: (Ga$_{0.991}$Mn$_{0.009}$)N thin films, Magnetic properties, Optical properties, Thermal annealing effect