Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2007; 50(6): 1916-1920

Published online June 15, 2007

Copyright © The Korean Physical Society.

Investigation of a GaMnN/GaN/GaMnN Magnetic Tunnel Junction

M. K. Li and T. W. Kang


We report on a theoretical study of the GaMnN/GaN/GaMnN magnetic tunneling junction. The spin polarization and the tunneling magnetoresistance (TMR) were investigated. The results show that the spin polarization and the TMR strongly depends on the applied bias voltage. A low bias is important for observation of the TMR at any temperature. At high bias, the spin polarization tends to a constant, and the TMR decreases to almost 0. The spin polarization and the TMR in this structure are in inverse proportion to the doping density in the leads.

Keywords: GaMnN, Spintronics, Non-equilibrium Green function, Tunneling magnetoresistance, Magnetic tunneling junction