Transport Spectroscopy of a Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET
J. Korean Phy. Soc. 2007; 50: 885~888
Published online March 15, 2007 © 2007 The Korean Physical Society.

Abstract
We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET). The differential conductance $G$ measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels extracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation.
Keywords: Single-electron transistor, Transport spectroscopy, Energy level, Harmonic oscillator


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