Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

Condensed Matter

J. Korean Phy. Soc. 2007; 50(1): 59-63

Published online January 15, 2007     https://doi.org/10.3938/jkps.50.59

Copyright © The Korean Physical Society.

Optical Investigation of Quaternary AlxInyGa1-x-yN Epilayers Grown by Using Pulsed Metalorganic Chemical Vapor Deposition

Mee-Yi Ryu , J. H. Song , C. Q. Chen , M. Asif Khan

Abstract

Photoluminescence (PL) and time-resolved PL measurements have been carried out in the quaternary Al$_x$In$_y$Ga$_{1-x-y}$N epilayers grown by using pulsed metalorganic chemical vapor deposition (PMOCVD). PMOCVD-grown AlInGaN layers show a strong blueshift and linewidth broadening of the emission band with excitation power density, and the PL decay time increases with decreasing emission energy. These results are characteristic of localized carrier/exciton recombination, which is beneficial for strong spontaneous emission for ultraviolet (UV) light-emitting diodes (LEDs). The obtained properties indicate that quaternary AlInGaN is a promising material for UV applications and especially that the PMOCVD process is a useful method for fabricating the active region of a deep UV LED.

Keywords: AlInGaN, Pulsed MOCVD, Photoluminescence (PL), Time-resolved PL, Light-emitting diodes (LEDs)