Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2006; 49(3): 1303

Published online September 15, 2006     https://doi.org/

Copyright © The Korean Physical Society.

Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source

Beom-Yong Kim, Myoung-Gyun Ko, Eun-Joo Lee, Min-Soo Hong, You-Jin Jeon and Jong-Wan Park

Abstract

We studied the effect of an electron cyclotron resonance (ECR) plasma La$_2$O$_3$ film growth by using plasma-enhanced atomic layer deposition (PEALD). Lanthanum-oxide thin films deposited using ALD have high dielectric constants and low level leakage currents for use in next-generation semiconductors. We deposited La$_2$O$_3$ film on Si(100) by using ECR plasma-enhanced atomic layer deposition with La(EtCp)$_3$ as a precursor source and ozone as a reactant gas. In order to investigate the physical properties, we used field emission-scanning electron microscopy (FESEM), high resolution X-ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectrometry (RBS) analyses. The La$_2$O$_3$ films had a growth rate of 0.2 AA/cycle at plasma power of 500 W and very low contamination. The lanthanum-oxide film exhibited an amorphous-like structure.