Electrical and Optical Properties of a n-Type ZnO Thin Film Deposited on a Si Substrate by Using a Double RF Co-Sputtering Method
J. Korean Phy. Soc. 2006; 49: 1126~
Published online September 15, 2006 © 2006 The Korean Physical Society.

Outstanding n-type ZnO thin films were prepared on Si substrates by utilizing a double RF co-sputtering method. Our unique double RF technique has many attractive merits for synthesizing ZnO thin films with excellent optoelectronic properties at various temperatures. The ZnO thin films were also post-annealed at various temperatures. The X-ray diffraction patterns and X-ray photoelectron spectroscopy indicated well-grown ZnO films with a (002) orientation and with gorgeous chemically bond states, respectively. In addition, photoluminescence measurements indicated a band-gap of 3.4 eV in the ZnO films. The scanning electron microscopy images showed that the as-grown ZnO thin film had hexagonal column shapes, such as hexagonal rods. The ZnO film exhibited an UV light response with a cut-off wavelength of $sim$370 nm at room temperature.

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