Oxygen Pressure Dependent Resistance-Switching Properties of Nickel-Oxide Films Grown by Using a Pulsed Laser Deposition Method
J. Korean Phy. Soc. 2006; 49: 1066~
Published online September 15, 2006 © 2006 The Korean Physical Society.

Abstract
Highly oriented polycrystalline nickel-oxide films were grown on Pt (111) substrates moderately heated by using a non-reactive pulsed laser deposition method. The oxygen pressure of the process vacuum was varied from 1 to 200 mTorr to study its effect on the composition with the other parameters fixed. The oxygen-pressure-dependent compositional, structural, and electrical properties of the nickel-oxide films were investigated by using X-ray diffraction, atomic force microscopy, scanning electron microscopy, and current-voltage measurements. From the measurements, the oxygen content during deposition was an important factor for the structural properties and for reproducible resistance-switching characteristics.


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