Properties of Organic Thin-Film Transistors on Hybrid-Type Interlayer Dielectric Materials
J. Korean Phy. Soc. 2006; 49: 865~
Published online September 15, 2006 © 2006 The Korean Physical Society.

Abstract
A pentacene-channel organic-field-effect transistor was prepared on a hybrid-type SiOC film as gate dielectric material without self-aligned materials. The island growth of pentacene was correlated with the surface energy of the SiOC films deposited with various flow rate ratios. The surface energy of the SiOC film with hybrid properties was lower than that of the SiOC film with other properties; therefore, the surface diffusivity increased because of the weak boundary condition; the coverage increased, as well


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