Ex) Article Title, Author, Keywords
Published online September 15, 2006
Copyright © The Korean Physical Society.
Yong-Hoon Kim, Won-Keun Kim and Jeong-In Han
In this research, we investigated transparent zinc-indium-oxide (ZIO)-based thin-film transistors (TFTs) using an organic gate dielectric layer on a glass substrate. The channel layer was deposited at room temperature by using an rf magnetron sputtering system with a ZIO target and Ar/O$_2$ as a sputtering gas. The electrical properties of the TFTs varied with the O$_2$ partial pressure when the channel layer deposition was carried out. With a bottom contact-type TFT geometry, using Au as the source-drain electrode, the ZIO-based TFT showed a field-effect mobility of up to 0.5 cm$^2$/Vs and on/off ratio of more than 10$^5$.
Copyright © 2016 The Korean Physical Society.
The Korean Physical Society, 22, Teheran-ro 7-gil, Gangnam-gu, Seoul 06130, Korea
Tel:+82-2-556-4737 (EXT. #1)
Publication) Tel: +82-2-556-4737 (EXT. #1),
License No: 220-82-01588 President: Tae Won Noh