Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524

Article

Application and Devices

Published online September 15, 2006    

Copyright © The Korean Physical Society.

Electrical Characterization of Si Nanoparticles Embedded in SiO2 Thin Films

Yang Do Kim, Eun Kyu Kim, Soojin Lee and Woon Jo Cho

J. Korean Phys. Soc. 49(3), 1192 (2006)

Abstract

A floating gated quantum dot memory using threshold shifting from charges stored in nanoparticles of silicon is expected to be promising candidate for future nonvolatile memory devices. Silicon nanoparticles of 1 $sim$ 5 nm in diameter embedded in SiO$_2$ thin films were made by using an ultrasound induced solution method. SiO$_2$ layers were deposited by RF magnetron sputtering in pure Ar gas. The substrate temperatures was changed from room temperature to 200 $^circ$C under the same deposition conditions. From the capacitance-valtage measurements of metal-oxide-semiconductor capacitors fabricated with the Si nanopaticles in the SiO$_2$ layer, the flat-band voltages changed by about 4.8 V due to charging and discharging to the nanoparticles