Ex) Article Title, Author, Keywords
Published online September 15, 2006
Copyright © The Korean Physical Society.
Dong Uk Lee, Jae-Hoon Kim and Eun Kyu Kim
In$_2$O$_3$ has a direct band gap with energy of 3.6 eV and is expected to be used in microelectronics devices such as solar cells, organic light-emitting diodes, flat-panel displays, and gas sensors. To fabricate an indium-oxide nano-particle,we deposited thin indium films with thickness of 5, 10, and 15 nm on Si substrates by using a thermal evaporator, and we spin-coated polyamic acid (PAA) on the indium films. They were cured at 400 $^circ$C for 1 hour in a rapid thermal annealing system under a N$_2$ atmosphere. An electrical characterization of the indium-oxide nano-particles was carried out by using capacitance-voltage (C-V) measurement. This system shows a potential for device application such as a nano-floating gate memories
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