Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524

Article

Application and Devices

Published online September 15, 2006    

Copyright © The Korean Physical Society.

Fabrication and Electrical Characterization of a Floating Gate Capacitor with In2O3 Nano-Particles

Dong Uk Lee, Jae-Hoon Kim and Eun Kyu Kim

J. Korean Phys. Soc. 49(3), 1188 (2006)

Abstract

In$_2$O$_3$ has a direct band gap with energy of 3.6 eV and is expected to be used in microelectronics devices such as solar cells, organic light-emitting diodes, flat-panel displays, and gas sensors. To fabricate an indium-oxide nano-particle,we deposited thin indium films with thickness of 5, 10, and 15 nm on Si substrates by using a thermal evaporator, and we spin-coated polyamic acid (PAA) on the indium films. They were cured at 400 $^circ$C for 1 hour in a rapid thermal annealing system under a N$_2$ atmosphere. An electrical characterization of the indium-oxide nano-particles was carried out by using capacitance-voltage (C-V) measurement. This system shows a potential for device application such as a nano-floating gate memories