Dielectric Properties of Highly Oriented Pb0.65Ba0.35ZrO3 Thin Films
J. Korean Phy. Soc. 2005; 47: 243~
Published online September 30, 2005 © 2005 The Korean Physical Society.

Abstract
Pb$_{0.65}$Ba$_{0.35}$ZrO$_{3}$ (PBZ) thin filmscite{R1} were grown on MgO (001) substrates by pulsed laser deposition %%@ (PLD). We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high %%@ $c-$axis orientation appeared in PBZ thin film grown at a deposition temperature of $550~^{circ}mathrm{C}$. The %%@ $c-$axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage %%@ measurements. The tunability and dielectric loss of the PBZ thin film were 20~\% and 0.00959, respectively. In addition, we %%@ compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a %%@ Ba$_{0.5}$Sr$_{0.5}$TiO$_{3}$ (BST) thin film, which is a well-known material applicable to tunable microwave devices. We %%@ confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.


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