Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2005; 47(9(2)): 243

Published online September 30, 2005     https://doi.org/

Copyright © The Korean Physical Society.

Dielectric Properties of Highly Oriented Pb0.65Ba0.35ZrO3 Thin Films

J.S. Kim, J.S. Choi, J.H. Lee, S.H. Kim, S.H. Jeon, I.R. Hwang, B.H. Park, T.J. Choi, S.H. Shin, J.C. Lee, M.J. Lee, S.A. Seo, I.K. Yoo

Abstract

Pb$_{0.65}$Ba$_{0.35}$ZrO$_{3}$ (PBZ) thin filmscite{R1} were grown on MgO (001) substrates by pulsed laser deposition %%@ (PLD). We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high %%@ $c-$axis orientation appeared in PBZ thin film grown at a deposition temperature of $550~^{circ}mathrm{C}$. The %%@ $c-$axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage %%@ measurements. The tunability and dielectric loss of the PBZ thin film were 20~\% and 0.00959, respectively. In addition, we %%@ compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a %%@ Ba$_{0.5}$Sr$_{0.5}$TiO$_{3}$ (BST) thin film, which is a well-known material applicable to tunable microwave devices. We %%@ confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.