In this study, the inclination of threading dislocations in an on-axis single-crystal free-standing diamond grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) was analyzed using synchrotron white beam X-ray topography (SWBXRT). The majority of dislocations in CVD-grown diamond were known as [001] threading dislocation; however, SWBXRT indicated that the dislocations were inclined from [001] direction. The exact [001] dislocation accounted for 20 % of investigated dislocations, and the remaining dislocations inclined randomly from the [001] direction with 7–12°. The analyzed sample has no dependence on a particular direction due to localized step flow caused by on-axis growth.