Structural and Optical Properties of Sm-doped BaMoO4 Phosphor Thin Films Deposited by Radio-Frequency Magnetron Sputtering
Sm3+-doped BaMoO4 phosphor thin films were prepared by radio-frequency magnetron sputtering on sapphire substrates at several growth temperatures followed by rapid thermal annealing. A 1 inch-diameter BaMoO4 target doped with 5 mol% Sm2O3 was synthesized using solid-state reaction of BaCO3, MoO3, and Sm2O3 as starting materials. The highest red emission intensity of BaMoO4:Sm3+ phosphor thin film was achieved at a growth temperature of 400 °C, where the optical band gap was 4.70 eV and the color chromaticity coordinate was (0.492, 0.353). These results suggest that the BaMoO4:Sm3+ phosphor thin film is a promising candidate for application in red-light-emitting devices.