Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer

J. Korean Phys. Soc. 2020; 76: 278~280
Published online February 28, 2020 © 2020 The Korean Physical Society.


1School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea
2National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Pohang 37673, Korea
3School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea
Correspondence to: J. W. Yang, H. Kim
Abstract
The AlGaN/GaN high electron mobility transistors (HEMTs) fabricated with MgF2 passivation layer exhibited a higher transconductance of 136 mS/mm, a significant reduction in the gate leakage currents, and a higher breakdown voltage of 563 V compared to the reference one, owing to the effective suppression of charge trapping at the surfaces.
PACS numbers: 73.61.Ey, 85.30.Tv
Keywords: MgF2, Passivation, AlGaN/GaN, High electron mobility transistors


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