Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2011; 59(2(1)): 482-484
Published online August 12, 2011 https://doi.org/10.3938/jkps.59.482
Copyright © The Korean Physical Society.
A. S. Zakirov, Sh. U. Yuldashev, H. D. Cho, J. C. Lee, T. W. Kang
The characteristics of the p-n heterojunction between vertically aligned ZnO nanowires and a Poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) thin film were investigated. The current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 5.39 ¡¿ 10?7 A at -2 V, a breakdown voltage greater than 10 V, and a forward turn-on voltage of 1 V. In addition, the effects of ultraviolet (UV) illumination and temperature on the I-V characteristics of the ZnO/PEDOT:PSS configuration were also investigated. The photoelectric measurements demonstrated that the photodiode had a high sensitivity and selectivity to UV light.
Keywords: , ZnO nanowires, PEDOT:PSS, p-n- heterojunction, I-V characteristics
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