Study on the Oxide Trap Distribution in a Thin Gate Oxide from Random Telegraph Noise in the Drain Current and the Gate Leakage Current
J. Korean Phy. Soc. 2011; 58: 1518~1521
Published online May 13, 2011 © 2011 The Korean Physical Society.

Random telegraph noise in the drain current (Id RTN) and the gate current (Ig RTN) has been studied to characterize slow oxide traps in a thin gate oxide. First, Ig RTN was classified into two categories from its dependence on gate bias. Through the analysis of Id and Ig RTNs, the distribution of oxide traps in the thin oxide was also studied. Most of the oxide traps obtained from Id RTN were found to be in the middle range of the oxide and to have an energy level within a narrow range whereas the oxide traps from Ig RTN were widely distributed.
Keywords: RTN, Ig RTN, Id RTN, Oxide trap distribution, Trap location, Trap energy level,

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