Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2011; 58(5(1)): 1334-1338

Published online May 13, 2011     https://doi.org/10.3938/jkps.58.1334

Copyright © The Korean Physical Society.

THz Generation Characteristics of Low-temperature-grown InGaAs Emitters

J. O. Kim, S. J. Lee, D. S. Yee, S. K. Noh, J. H. Shin, K. H. Park, C. Kang, C.-S. Kee, D. W. Park, J. S. Kim, J. S. Kim

Abstract

Low-temperature grown (LTG) InGaAs emitters were prepared on semi-insulating InP substrates for investigating terahertz (THz) generation. The characteristics were first examined by using femtosecond (fs) laser excitation, and LTG InGaAs was applied to the emitter of the THz photomixer. The THz photocurrent generated by the fs-pulse laser had a peak at around 0.2 THz, which exponentially decayed with increasing frequency. The cw THz output power of the photomixer showed quadratic changes that increased with bias voltage and decreased with beat frequency.

Keywords: Low-temperature growth, Indium gallium arsenide (InGaAs), Terahertz generation, Femtosecond laser, Terahertz photomixer,