Journal of the Korean Physical Society

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Article

J. Korean Phy. Soc. 2011; 58(5(1)): 1361-1364

Published online May 13, 2011     https://doi.org/10.3938/jkps.58.1361

Copyright © The Korean Physical Society.

Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer

H. C. Jeon, S. J. Lee, T. W. Kang, K. J. Chang, Yung Kee Yeo, T. F. George

Abstract

The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization of the Mn delta-doped (Ga0.995Mn0.005)N thin films was significantly enhanced in comparison with that of the conventionally-doped (Ga0.995Mn0.005)N thin films. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin films was above room temperature. The theoretical electronic results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance, indicative of an enhancement of the magnetic properties in (Ga1?xMnx)N thin films.

Keywords: Mn delta-doping, GaMnN thin film, High Curie temperature, ,

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