Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2010; 57(6(1)): 1679-1683
Published online December 15, 2010 https://doi.org/10.3938/jkps.57.1679
Copyright © The Korean Physical Society.
Young Pak Lee, G. H. Kim, M. S. Seo, W. C. Nam, S. J. Lee, J. Y. Rhee, K. W. Kim
?We fabricated two-dimensional Co anti-dot arrays on a silicon substrate using the CMOS (complementary metal-oxide semiconductor) process: a square-lattice structure of 1.02 mm-diameter circular holes with a periodicity of 1.60 mm. The x-ray diffraction data indicate that the anti-dot arrays constitute an exchange-biased system, which consists vertically of a ferromagnetic Co layer interfaced with an antiferromagnetic Co-oxide layer. We found a resistivity anomaly of its temperature dependence below the Neel temperature of CoO, and the exchange-biased behaviors in both magnetization curves and magneto-transport data. By extracting the exchange-bias fields of anti-dot array, it is found that the exchange-bias for the longitudinal magnetic field is much larger than that for the transverse field, which might be attributed to the spin-transfer effect
Keywords: magneto-transport, magnetoresistance, Co, Co anti-dot arrays
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