One-to-three-period multilayers (MLs) of Ge nanodots (NDs) for nonvolatile memories (NVMs) have been self-assembled at room temperature by ion beam sputtering deposition of 5-monolayer Ge between SiO2 layers. Using the structure of 4-nm tunnel oxide/Ge-ND MLs (middle oxide: 2 nm)/15-nm control oxide, NVM MOSFET devices were fabricated based on the 0.6-mm CMOS standard processes. The size and distribution of the Ge NDswere almost not changed after the device-fabrication processes. The memory window and program speed increased from 1.1 to 1.7 V and from 10 ms to 500 ms at +18 V, respectively with increasing period from 1 to 3. The programmed threshold voltages in the cycling behaviors were almost constant within about 0.05 V up to ~104 program/erase cycles for the two- and three- period devices. In contrast, the erased threshold voltages showed a drift-up for all devices with the drift-up decelerated in larger-period devices. The charge-loss rate was also reduced for larger-period devices.