Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2010; 56(1(2)): 378-382

Published online January 15, 2010

Copyright © The Korean Physical Society.

Characteristics of ZnO nano?crystal grown on the Al?doped ZnO thin films deposited by PLD method

jong pil KIM, Jong-Seong Bae, Jeong-Kyu Bang, Jang-Hee Yoon, Mi-Sook Won, Byoung Seob Lee, Su-Yeon Lee, Ok-Sang Jung, Eundo Kim


ZnO nano?crystal thin films were fabricated on Al?doped ZnO/SiO2/Si substrate, prepared from pulsed laser deposition by solvothermal technique at a low temperature. The Al?doped ZnO substrate and ZnO nano?crystal thin films were preferably oriented in the (00l) direction. In films, nucleation can be facilitated by the presence of the substrate, which constitutes a site for heterogeneous nucleation. The ZnO nanorod on the Al?doped ZnO substrate was grown 178.8, 851.4 and 916.2 nm length with growing time, 24, 48, and 96h, respectively. The ZnO nanorod thin films arrays with diameters of 45-100 nm, separated by gaps of 30-90 nm. Photoluminescence (PL) spectroscopy using a He?Cd laser (325 nm, 40 mW) has employed to characterize the ZnO nanorod thin films. A strong blue emission centered at 377 nm was clearly observed at room temperature.

Keywords: Solvothermal, Pulsed laser deposition, Al?doped ZnO, Solar cell, ZnO nanorod