Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2010; 56(1(2)): 378-382
Published online January 15, 2010 https://doi.org/10.3938/jkps.56.378
Copyright © The Korean Physical Society.
jong pil KIM, Jong-Seong Bae, Jeong-Kyu Bang, Jang-Hee Yoon, Mi-Sook Won, Byoung Seob Lee, Su-Yeon Lee, Ok-Sang Jung, Eundo Kim
ZnO nano?crystal thin films were fabricated on Al?doped ZnO/SiO2/Si substrate, prepared from pulsed laser deposition by solvothermal technique at a low temperature. The Al?doped ZnO substrate and ZnO nano?crystal thin films were preferably oriented in the (00l) direction. In films, nucleation can be facilitated by the presence of the substrate, which constitutes a site for heterogeneous nucleation. The ZnO nanorod on the Al?doped ZnO substrate was grown 178.8, 851.4 and 916.2 nm length with growing time, 24, 48, and 96h, respectively. The ZnO nanorod thin films arrays with diameters of 45-100 nm, separated by gaps of 30-90 nm. Photoluminescence (PL) spectroscopy using a He?Cd laser (325 nm, 40 mW) has employed to characterize the ZnO nanorod thin films. A strong blue emission centered at 377 nm was clearly observed at room temperature.
Keywords: Solvothermal, Pulsed laser deposition, Al?doped ZnO, Solar cell, ZnO nanorod
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