Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

Condensed Matter

J. Korean Phy. Soc. 2010; 56(4): 1150-1155

Published online April 15, 2010     https://doi.org/10.3938/jkps.56.1150

Copyright © The Korean Physical Society.

  Comparison between SiOC Thin Film by plasma enhance chemical vapor deposition and SiO2 Thin Film by Fourier Transform Infrared Spectroscopy  

teresa OH, Chi Kyu Choi

Abstract

SiOC thin films were deposited by using inductively coupled plasma chemical vapor deposition, and the detailed chemical properties were analyzed by the Fourier transform infrared spectroscopy. The dielectric constant of the SiOC film was found to be decreased due to the ionic polarization between hydrophilic and hydrophobic properties according to their chemical properties analyzed by the FTIR spectra. The broad bonding mode between the range of 640~950 cm-1 consisted of Si-C (740 cm-1), C-O (820 cm-1) and Si-O (884 cm-1) bonds, and the peak intensity of these bonds were different according to the chemical properties. The hydrophilic properties of SiOC film showed a dominant of Si-C (740 cm-1) bond, however, the hydrophobic properties of SiOC film displayed a dominant of C-O (820 cm-1) bond. The SiOC thin film with hybrid type between hydrophilic and hydrophobic properties showed a dominant of Si-O (884 cm-1) bond and also had the lowest dielectric constant because of lowering the polarization between hydrophilic and hydrophobic properties.

Keywords: FTIR spectra, Si-O-C bond, low-k, sioc film, SiO2 film