Comparison between SiOC Thin Film by plasma enhance chemical vapor deposition and SiO2 Thin Film by Fourier Transform Infrared Spectroscopy  
J. Korean Phy. Soc. 2010; 56: 1150~1155
Published online April 15, 2010 © 2010 The Korean Physical Society.

SiOC thin films were deposited by using inductively coupled plasma chemical vapor deposition, and the detailed chemical properties were analyzed by the Fourier transform infrared spectroscopy. The dielectric constant of the SiOC film was found to be decreased due to the ionic polarization between hydrophilic and hydrophobic properties according to their chemical properties analyzed by the FTIR spectra. The broad bonding mode between the range of 640~950 cm-1 consisted of Si-C (740 cm-1), C-O (820 cm-1) and Si-O (884 cm-1) bonds, and the peak intensity of these bonds were different according to the chemical properties. The hydrophilic properties of SiOC film showed a dominant of Si-C (740 cm-1) bond, however, the hydrophobic properties of SiOC film displayed a dominant of C-O (820 cm-1) bond. The SiOC thin film with hybrid type between hydrophilic and hydrophobic properties showed a dominant of Si-O (884 cm-1) bond and also had the lowest dielectric constant because of lowering the polarization between hydrophilic and hydrophobic properties.
Keywords: FTIR spectra, Si-O-C bond, low-k, sioc film, SiO2 film

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