Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2010; 56(2): 562-566
Published online February 12, 2010 https://doi.org/10.3938/jkps.56.562
Copyright © The Korean Physical Society.
Hee Jae Kang, Y. Y. Song, K. H. Park, K. S. Park, S. K. Oh, D. S. Yang, S. W. Shin, J. H. Song
The 80 keV Co ions with a dose of 3 ?1016 ions/cm2 were implanted into high quality 0.5-mm-thick ZnO (0001) single crystals with very low carrier concentration of n = 2.0?013/cm3. The implanted samples were post-annealed at 700, 800 and 900 ¡É by rapid thermal annealing (RTA) in a N2 atmosphere. The structural, magnetic and transport properties of Co-ion-implanted ZnO were investigated. The Co K-edge Extended X-ray Absorption Fine Structure revealed the coexistence of Co-Co and Co-Zn bonds. The Co ions substituted into Zn sites form Zn1-xCoxO. Magnetoresistance (MR) data showed sign change from positive to negative between 50 K and 77 K. Strong negative anomalous Hall effect (SNAHE) was observed in the temperature range with positive MR. The sign change in the observed SNAHE seems to support the theory of Burkov and Balent.
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