?Preparation of ITO and IZO thin films by using Facing Target Sputtering (FTS) method
- In the study we investigated electrical and optical properties of indium oxide (In2O3) doped with 10 wt.?? tin oxide (SnO2)and indium oxide (In2O3) doped with 10 wt.% zinc oxide thin films for transparent conductive oxide (TCO) in facing targets sputtering (FTS) system. All thin films were prepared on the glass at room temperature and in a variety of oxygen contents in the sputter gas. And all as-deposited thin films were annealed at the various temperatures in the air atmosphere. The electrical and optical properties of as-deposited thin films were investigated by a four point probe,?UV/VIS spectrometer and an X-ray diffractometer (XRD) and a Hall Effect measurement.
As a result, as increasing oxygen contents in the sputter gas, the optical transmittance in visible range of all thin films increased (>80??). ITO and IZO thin film has 6.7?0-4??§?-cm and 4.5?0-4 §?-cm of resistivity at optimum oxygen contents, respectively. After post-annealed, the structure of ITO thin film?changed from amorphous to?polycrystalline but IZO thin films had amorphous structure.
- Keywords: FTS, Indium tin oxide, Indium zinc oxide, annealing