Nonvolatile Unipolar and Bipolar Resistive SwitchingCharacteristics in Co-doped TiO$_{2}$ Thin Films with DifferentCompliance Currents
J. Korean Phy. Soc. 2009; 55: 1009~1012
Published online September 15, 2009 © 2009 The Korean Physical Society.

Abstract
vspace{-0.2cm}The resistive switching behavior of 100nmthick Co-doped TiO$_{2}$thin films grown by using a conventional rf magnetron sputteringsystem was investigated by using structural and electricalmeasurements The Co-doped TiO$_{2}$ thin films dispaly a rutilephase and a column-like structure. An unusual result, a switchingtransition from a unipolar to a bipolar behavior, was clearlyobserved at a high compliance current. The experimental resultssuggest that the switching transition is related to the formation oftrap sites (CoO$_{x }$, TiO$_{2-x}$, andCo$_{x}$-Ti$_{1-x}$-O$_{2})$ under large electrical stressconditions. The improved reproducible switching properties of ourCo-doped TiO$_{2}$ materials under forward and reverse bias stressesdemonstrate the possibility of future non-volatile memory elements.
Keywords: ReRAM, Nonvolatile memory, Bipolar switching, Co-doped TiO$_{2}$


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