Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2009; 55(6): 2378-2382

Published online December 15, 2009

Copyright © The Korean Physical Society.

Effect of Thermal Annealing on theMetal-Semiconductor Contact of a CZT Schottky Detector

S.H. Park, J.H. Ha, J.H. Lee, H.S. Kim, Y.H. Cho, Y.K. Kim


A thermal annealing process has been included in the Cadmium ZincTelludie (CZT) detector fabrication procedure to decrease theleakage current and to obtain a stable detector performance. Becauseof its low work function, indium can be used as the metal contact ofa CZT Schottky detector. The effect of low-temperature annealing onan indium/CZT contact was studied. CZT Schottky detectors with anindium/CZT/gold structure were made. The detectors were annealed for10 hours in a vacuum and for 2, 4, and 8 hours in air. The leakagecurrent and the energy resolution of each detector were measuredbefore and after the annealing process, and the measured data werecompared. The operating performance of CZT Schottky detector wasfound to be enhanced when the detector was annealed at a lowtemperature in air.

Keywords: CZT, Schottky detector, In/CZT contact, Leakage current