Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2009; 55(4): 1331-1334
Published online October 15, 2009 https://doi.org/10.3938/jkps.55.1331
Copyright © The Korean Physical Society.
S. K. Noh, J. O. Kim, S. J. Lee
A modified approach, junction Hall effect measurement (JHEM), is tried. This is a Hall effect measurement effective in determining the Hall parameters of epitaxial layers grown on conductive substrate with no use of insultion layer or semi-insulating (SI) substrate, by applying the built-in potential barrier to electrical isolation. Prior to examination of GaSb, the utility of JHEM has been proven by demonstrating the Hall parameters taken from a series of epitaxial GaAs n-p junctions, comparing with an equivalent n-GaAs epilayer grown on SI-GaAs substrate. Using the JHEM approach, finally, we directly determine the Hall parameters of epitaxial p-GaSb layer grown on conductive n-GaSb substrate.
Keywords: Junction Hall effect measurement (JHEM), Hall parameters, Conductive substrate, P-n junction, Gallium arsenide (GaAs), Gallium antimonide (GaSb)
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