Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
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Article

J. Korean Phy. Soc. 2009; 55(4): 1331-1334

Published online October 15, 2009     https://doi.org/10.3938/jkps.55.1331

Copyright © The Korean Physical Society.

A Modified Approach to Determine the Hall Parameters of Epitaxial GaSb Grown on Conductive GaSb Substrate

S. K. Noh, J. O. Kim, S. J. Lee

Abstract

A modified approach, junction Hall effect measurement (JHEM), is tried.  This is a Hall effect measurement effective in determining the Hall parameters of epitaxial layers grown on conductive substrate with no use of insultion layer or semi-insulating (SI) substrate, by applying the built-in potential barrier to electrical isolation.  Prior to examination of GaSb, the utility of JHEM has been proven by demonstrating the Hall parameters taken from a series of epitaxial GaAs n-p junctions, comparing with an equivalent n-GaAs epilayer grown on SI-GaAs substrate.  Using the JHEM approach, finally, we directly determine the Hall parameters of epitaxial p-GaSb layer grown on conductive n-GaSb substrate. 

Keywords: Junction Hall effect measurement (JHEM), Hall parameters, Conductive substrate, P-n junction, Gallium arsenide (GaAs), Gallium antimonide (GaSb)

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