Effect of F$^-$ Implantation on the Optical and the Electrical Properties of GaInZnO Thin Films
J. Korean Phy. Soc. 2009; 55: 636~639
Published online August 14, 2009 © 2009 The Korean Physical Society.

GaInZnO (GIZO) thin films have been deposited on 100 nmSiO$_{2}$/(100) Si wafers by RF magnetron sputtering and weresubsequently implanted with F$^{-}$ ions at various fluences andenergies. Broad photoluminescence (PL) spectra, peaked at about 715nm, are observed in as-deposited GIZO films, and are attributed tooxygen-deficient defects. The implantation reduces the PL intensityand enhances the conductivity. The PL enhancement is more effectiveat higher fluences and energies. The influence of annealing on thePL and the conductivity after implantation is much larger than thatof annealing without implantation. These results indicate that theF$^{-}$ ions are substitutionally incorporated in the GIZO films asshallow donors producing free carriers and that they occupy theoxygen vacancies, thereby reducing the defect density.
Keywords: GaInZnO, F$^{-}$ implantation, Photoluminescence, Conductivity, Oxygen vacancy, Shallow donor

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