Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2009; 55(2): 609-612

Published online August 14, 2009     https://doi.org/10.3938/jkps.55.609

Copyright © The Korean Physical Society.

Magnetic and Electric Properties of Ba-doped BiFeO3 Epitaxial Thin Films Prepared by Pulsed Laser Deposition

Preetam Singh, K.D. Sung, Y.A. Park, N. Hur, J.H. Jung

Abstract

We report the structural, magnetic and electric properties ofepitaxial Ba-doped BiFeO$_{3}$ (BBFO), {it i.e.},Bi$_{0.75}$Ba$_{0.25}$FeO$_{3-delta}$, thin films grown onSrRuO$_{3}$/SrTiO$_{3}$ (001) substrates by pulse laser depositiontechnique. At oxygen partial pressures of 500 mTorr and a substratetemperature of 600 $^circ$C, pure and epitaxial BBFO thin film isgrown without any Fe$_{2}$O$_{3}$ and Fe$_{3}$O$_{4}$ impurities.Ba$^{2+}$ doping in BiFeO$_{3}$ seems to induce a suppression of theantiferromagnetic spiral spin structure and the change of Fe-O-Febonding angle, in addition to the creation of oxygen vacancies.Hence, the BBFO film shows weak ferromagnetism, but a leakydielectric behavior at room temperature. Thermally-activated hoppingis found to be the main conduction mechanism in BBFO with anactivation energy of 0.52 eV.

Keywords: Epitaxial Bi$_{0.75}$Ba$_{0.25}$FeO$_{3-delta}$ thin film, Weak ferromagnetism, Leaky dielectric