Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2009; 55(2): 609-612

Published online August 14, 2009

Copyright © The Korean Physical Society.

Magnetic and Electric Properties of Ba-doped BiFeO3 Epitaxial Thin Films Prepared by Pulsed Laser Deposition

Preetam Singh, K.D. Sung, Y.A. Park, N. Hur, J.H. Jung


We report the structural, magnetic and electric properties ofepitaxial Ba-doped BiFeO$_{3}$ (BBFO), {it i.e.},Bi$_{0.75}$Ba$_{0.25}$FeO$_{3-delta}$, thin films grown onSrRuO$_{3}$/SrTiO$_{3}$ (001) substrates by pulse laser depositiontechnique. At oxygen partial pressures of 500 mTorr and a substratetemperature of 600 $^circ$C, pure and epitaxial BBFO thin film isgrown without any Fe$_{2}$O$_{3}$ and Fe$_{3}$O$_{4}$ impurities.Ba$^{2+}$ doping in BiFeO$_{3}$ seems to induce a suppression of theantiferromagnetic spiral spin structure and the change of Fe-O-Febonding angle, in addition to the creation of oxygen vacancies.Hence, the BBFO film shows weak ferromagnetism, but a leakydielectric behavior at room temperature. Thermally-activated hoppingis found to be the main conduction mechanism in BBFO with anactivation energy of 0.52 eV.

Keywords: Epitaxial Bi$_{0.75}$Ba$_{0.25}$FeO$_{3-delta}$ thin film, Weak ferromagnetism, Leaky dielectric