Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2009; 54(9(2)): 901-905

Published online February 14, 2009     https://doi.org/10.3938/jkps.54.901

Copyright © The Korean Physical Society.

Thermal-Annealing Effect on the Diode Characteristics of n-ZnO/p-Si (111)

J.H. Lee, J.Y. Lee, J.J. Kim, H.S. Kim, N.W. Jang, H.K. Cho, C.R. Cho

Abstract

Zinc-oxide films were deposited, by a RF (radio-frequency)sputtering system, on p-type Si (111) substrates at roomtemperature. The films were annealed at various temperatures inorder to study the annealing temperature dependence of the diodecharacteristics of n-ZnO/p-Si (111). An n-ZnO/p-Si heterojunctiondiode was fabricated by using a photolithographic method. The diodecharacteristics were investigated by using current - voltagemeasurements (HP4145B). The effect of annealing temperature on thestructural and the morphological property was investigated by usingX-ray diffraction (XRD) and atomic force microscopy (AFM). Theturn-on voltage of the diodes was about 1.4 $sim$ 1.7 V and thecurrent-voltage curve revealed an excellent rectification behavior.The diode characteristics changed with annealing temperature andn-ZnO/p-Si (111) heterojunction diodes exhibited yellow light at 13$sim$ 15 V.

Keywords: ZnO, p-Si, Thermal annealing, Heterojunction, LED